random access - перевод на Английский
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random access - перевод на Английский

ABILITY TO ACCESS AN ARBITRARY ELEMENT OF A SEQUENCE IN EQUAL TIME
Random-access storage; Random access file; Random-access; Random I/O; Random read; Random write; Direct access (computing)
  • Random access compared to [[sequential access]]
Найдено результатов: 1016
random access         

общая лексика

прямой [произвольный] доступ

способ организации доступа к устройству памяти, при котором для чтения/записи произвольного блока данных не требуется последовательный просмотр блоков, начиная с самого первого, например ОЗУ, диски

произвольный порядок обращения

синоним

direct access; immediate access; (sequential access)

random access         
произвольный (прямой) доступ
random access         
произвольный /прямой/ доступ
Dynamic Random-Access Memory         
  • [[MoSys]] MDRAM MD908
  • accessdate=2022-03-09}}</ref> (lower edge, right of middle).
  • 1 Mbit high speed [[CMOS]] pseudo static RAM, made by [[Toshiba]]
  • NMOS]] DRAM cell. It was patented in 1968.
  • die]] of a Samsung DDR-SDRAM 64MBit package
  • Inside a Samsung GDDR3 256&nbsp;MBit package
  • A 512 MBit [[Qimonda]] GDDR3 SDRAM package
  • Writing to a DRAM cell
RANDOM-ACCESS MEMORY THAT STORES EACH BIT OF DATA IN A SEPARATE CAPACITOR WITHIN AN INTEGRATED CIRCUIT
DRAM (memory); Pseudostatic RAM; PSRAM; Pseudostatic Random Access Memory; Window RAM; Dynamic RAM; EDO RAM; Fast Page Mode DRAM; FPM RAM; FPM DRAM; Fast Page Mode RAM; BEDO (RAM); MDRAM; Row Access Strobe; Column Access Strobe; CAS access time; Precharge interval; Row address select; Column address select; 1T DRAM; DDRAM; D-RAM; EDO DRAM; Fast page mode; Page mode memory; Extended Data Out RAM; BEDO RAM; Burst EDO; Multibank DRAM; Intel 1102; Burst EDO DRAM; Memory Timing; Dynamic Random Access Memory; FPRAM; Dynamic random access memory; Extended data out DRAM; Extended Data Out DRAM; Dynamic Random access memory; Static column RAM; Memory row; DRAM row; Row activation; WRAM (memory); 1T1C; 1t1c; 3T1C; Page mode RAM; Page mode DRAM; DRAM; D. R. A. M.; D.R.A.M.; DRAM memory; Asynchronous DRAM; EDO memory; Fast page mode DRAM; Window DRAM; Video DRAM; Nibble mode; EDO SGRAM
см. DRAM
random access memory         
  • VEB Carl Zeiss Jena]] in 1989
  • DRAM Cell (1 Transistor and one capacitor)
  • These IBM [[tabulating machine]]s from the mid-1930s used [[mechanical counter]]s to store information
  • heatsink]]
  • SRAM Cell (6 Transistors)
  • desktop RAM]].
  • server]]s.
FORM OF COMPUTER DATA STORAGE
R.A.M.; Shadow Random Access Memory; Memory wall; Shadow ram; Shadow RAM; Shadow random access memory; Random-Access Memory; RAM chip; Random Access Memory; RAM (memory); Sigmaquad; Random access memory; Single sided RAM; Single-sided RAM; Single sided random access memory; Single-sided random access memory; RAM memory; Computer RAM memory; RAM; Memory bottleneck; History of random-access memory; RAM IC; RAM stick
запоминающее устройство с произвольным порядком выборки
random-access memory         
  • VEB Carl Zeiss Jena]] in 1989
  • DRAM Cell (1 Transistor and one capacitor)
  • These IBM [[tabulating machine]]s from the mid-1930s used [[mechanical counter]]s to store information
  • heatsink]]
  • SRAM Cell (6 Transistors)
  • desktop RAM]].
  • server]]s.
FORM OF COMPUTER DATA STORAGE
R.A.M.; Shadow Random Access Memory; Memory wall; Shadow ram; Shadow RAM; Shadow random access memory; Random-Access Memory; RAM chip; Random Access Memory; RAM (memory); Sigmaquad; Random access memory; Single sided RAM; Single-sided RAM; Single sided random access memory; Single-sided random access memory; RAM memory; Computer RAM memory; RAM; Memory bottleneck; History of random-access memory; RAM IC; RAM stick

вычислительная техника

устройство запоминающее оперативное

запоминающее устройство с произвольным доступом

static RAM         
  • Four-transistor SRAM provides advantages in density at the cost of manufacturing complexity. The resistors must have small dimensions and large values.
  • A six-transistor CMOS SRAM cell. WL: word line. BL: bit line.
  • die]] of a STM32F103VGT6 [[microcontroller]] as seen by a [[scanning electron microscope]]. Manufactured by [[STMicroelectronics]] using a 180-[[nanometre]] process. Topology of the cells is clearly visible.
SEMICONDUCTOR MEMORY THAT USES FLIP-FLOPS TO STORE EACH BIT
Static RAM; S-RAM; Static Random Access Memory; SRAM latency; RSNM; Read static noise margin; Static random access memory; Static storage; ESRAM; 6T SRAM; 6T SRAM cell; 6T RAM cell

общая лексика

статическое ОЗУ

Смотрите также

SRAM; static memory

Window RAM         
  • [[MoSys]] MDRAM MD908
  • accessdate=2022-03-09}}</ref> (lower edge, right of middle).
  • 1 Mbit high speed [[CMOS]] pseudo static RAM, made by [[Toshiba]]
  • NMOS]] DRAM cell. It was patented in 1968.
  • die]] of a Samsung DDR-SDRAM 64MBit package
  • Inside a Samsung GDDR3 256&nbsp;MBit package
  • A 512 MBit [[Qimonda]] GDDR3 SDRAM package
  • Writing to a DRAM cell
RANDOM-ACCESS MEMORY THAT STORES EACH BIT OF DATA IN A SEPARATE CAPACITOR WITHIN AN INTEGRATED CIRCUIT
DRAM (memory); Pseudostatic RAM; PSRAM; Pseudostatic Random Access Memory; Window RAM; Dynamic RAM; EDO RAM; Fast Page Mode DRAM; FPM RAM; FPM DRAM; Fast Page Mode RAM; BEDO (RAM); MDRAM; Row Access Strobe; Column Access Strobe; CAS access time; Precharge interval; Row address select; Column address select; 1T DRAM; DDRAM; D-RAM; EDO DRAM; Fast page mode; Page mode memory; Extended Data Out RAM; BEDO RAM; Burst EDO; Multibank DRAM; Intel 1102; Burst EDO DRAM; Memory Timing; Dynamic Random Access Memory; FPRAM; Dynamic random access memory; Extended data out DRAM; Extended Data Out DRAM; Dynamic Random access memory; Static column RAM; Memory row; DRAM row; Row activation; WRAM (memory); 1T1C; 1t1c; 3T1C; Page mode RAM; Page mode DRAM; DRAM; D. R. A. M.; D.R.A.M.; DRAM memory; Asynchronous DRAM; EDO memory; Fast page mode DRAM; Window DRAM; Video DRAM; Nibble mode; EDO SGRAM

Смотрите также

WRAM

dynamic RAM         
  • [[MoSys]] MDRAM MD908
  • accessdate=2022-03-09}}</ref> (lower edge, right of middle).
  • 1 Mbit high speed [[CMOS]] pseudo static RAM, made by [[Toshiba]]
  • NMOS]] DRAM cell. It was patented in 1968.
  • die]] of a Samsung DDR-SDRAM 64MBit package
  • Inside a Samsung GDDR3 256&nbsp;MBit package
  • A 512 MBit [[Qimonda]] GDDR3 SDRAM package
  • Writing to a DRAM cell
RANDOM-ACCESS MEMORY THAT STORES EACH BIT OF DATA IN A SEPARATE CAPACITOR WITHIN AN INTEGRATED CIRCUIT
DRAM (memory); Pseudostatic RAM; PSRAM; Pseudostatic Random Access Memory; Window RAM; Dynamic RAM; EDO RAM; Fast Page Mode DRAM; FPM RAM; FPM DRAM; Fast Page Mode RAM; BEDO (RAM); MDRAM; Row Access Strobe; Column Access Strobe; CAS access time; Precharge interval; Row address select; Column address select; 1T DRAM; DDRAM; D-RAM; EDO DRAM; Fast page mode; Page mode memory; Extended Data Out RAM; BEDO RAM; Burst EDO; Multibank DRAM; Intel 1102; Burst EDO DRAM; Memory Timing; Dynamic Random Access Memory; FPRAM; Dynamic random access memory; Extended data out DRAM; Extended Data Out DRAM; Dynamic Random access memory; Static column RAM; Memory row; DRAM row; Row activation; WRAM (memory); 1T1C; 1t1c; 3T1C; Page mode RAM; Page mode DRAM; DRAM; D. R. A. M.; D.R.A.M.; DRAM memory; Asynchronous DRAM; EDO memory; Fast page mode DRAM; Window DRAM; Video DRAM; Nibble mode; EDO SGRAM

общая лексика

динамическое ОЗУ

Смотрите также

DRAM

EDO memory         
  • [[MoSys]] MDRAM MD908
  • accessdate=2022-03-09}}</ref> (lower edge, right of middle).
  • 1 Mbit high speed [[CMOS]] pseudo static RAM, made by [[Toshiba]]
  • NMOS]] DRAM cell. It was patented in 1968.
  • die]] of a Samsung DDR-SDRAM 64MBit package
  • Inside a Samsung GDDR3 256&nbsp;MBit package
  • A 512 MBit [[Qimonda]] GDDR3 SDRAM package
  • Writing to a DRAM cell
RANDOM-ACCESS MEMORY THAT STORES EACH BIT OF DATA IN A SEPARATE CAPACITOR WITHIN AN INTEGRATED CIRCUIT
DRAM (memory); Pseudostatic RAM; PSRAM; Pseudostatic Random Access Memory; Window RAM; Dynamic RAM; EDO RAM; Fast Page Mode DRAM; FPM RAM; FPM DRAM; Fast Page Mode RAM; BEDO (RAM); MDRAM; Row Access Strobe; Column Access Strobe; CAS access time; Precharge interval; Row address select; Column address select; 1T DRAM; DDRAM; D-RAM; EDO DRAM; Fast page mode; Page mode memory; Extended Data Out RAM; BEDO RAM; Burst EDO; Multibank DRAM; Intel 1102; Burst EDO DRAM; Memory Timing; Dynamic Random Access Memory; FPRAM; Dynamic random access memory; Extended data out DRAM; Extended Data Out DRAM; Dynamic Random access memory; Static column RAM; Memory row; DRAM row; Row activation; WRAM (memory); 1T1C; 1t1c; 3T1C; Page mode RAM; Page mode DRAM; DRAM; D. R. A. M.; D.R.A.M.; DRAM memory; Asynchronous DRAM; EDO memory; Fast page mode DRAM; Window DRAM; Video DRAM; Nibble mode; EDO SGRAM

Смотрите также

EDO

Определение

random access
¦ noun Computing the process of transferring information to or from memory in which every memory location can be accessed directly rather than being accessed in a fixed sequence.

Википедия

Random access

Random access (more precisely and more generally called direct access) is the ability to access an arbitrary element of a sequence in equal time or any datum from a population of addressable elements roughly as easily and efficiently as any other, no matter how many elements may be in the set. In computer science it is typically contrasted to sequential access which requires data to be retrieved in the order it was stored.

For example, data might be stored notionally in a single sequence like a row, in two dimensions like rows and columns on a surface, or in multiple dimensions. However, given all the coordinates, a program can access each record about as quickly and easily as any other. In this sense, the choice of datum is arbitrary in the sense that no matter which item is sought, all that is needed to find it is its address, i.e. the coordinates at which it is located, such as its row and column (or its track and record number on a magnetic drum). At first, the term "random access" was used because the process had to be capable of finding records no matter in which sequence they were required. However, soon the term "direct access" gained favour because one could directly retrieve a record, no matter what its position might be. The operative attribute, however, is that the device can access any required record immediately on demand. The opposite is sequential access, where a remote element takes longer time to access.

A typical illustration of this distinction is to compare an ancient scroll (sequential; all material prior to the data needed must be unrolled) and the book (direct: can be immediately flipped open to any arbitrary page). A more modern example is a cassette tape (sequential — one must fast forward through earlier songs to get to later ones) and a CD (direct access — one can skip to the track wanted, knowing that it would be the one retrieved).

In data structures, direct access implies the ability to access any entry in a list in constant time (independent of its position in the list and of the list's size). Very few data structures can make this guarantee other than arrays (and related structures like dynamic arrays). Direct access is required, or at least valuable, in many algorithms such as binary search, integer sorting, or certain versions of sieve of Eratosthenes.

Other data structures, such as linked lists, sacrifice direct access to permit efficient inserts, deletes, or re-ordering of data. Self-balancing binary search trees may provide an acceptable compromise, where access time is not equal for all members of a collection, but the maximum time to retrieve a given member grows only logarithmically with its size.

Как переводится random access на Русский язык